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Volume 14, Number 5, 2009

Comparison of Peripheral Dose measurements using Ionization chamber and MOSFET detector

Gopiraj Annamalai,  Ramasubramanian Velayudham



In radiation therapy, the peripheral dose (PD) – the dose outside the geometric boundaries of the radiation field – is of clinical importance. A metal oxide semiconductor field effect transistor (MOSFET) detector is used to estimate the peripheral dose.


The aim of this study is to investigate the ability of a MOSFET dosimetry system to accurately measure doses in peripheral regions of high energy X-ray beams.

Materials & Methods

The accuracy of the MOSFET system is evaluated by comparing peripheral region dose measurement with the results of standard ionization chamber measurements. Furthermore, the measurement of PD using a MOSFET detector helps us to keep the tolerance dose of any critical organ closer to the treatment field within the acceptable limits. The measurements were carried out using a 0.6 cc Farmer type ionization chamber and MOSFET 20 dosimetry system for field sizes ranging from 5 × 5 cm2 to 20 × 20 cm2 at three depths of 1.5 cm, 5 cm and 10 cm in a blue water phantom. PD were measured at distances varying from 1 cm to 30 cm from the field edges along the x axis for the open fields, with collimator rotation and with beam modifiers like 15 degree, 30 degree and 45 degree wedges.


The results show a good agreement of measured dose by both methods for various field sizes, collimator rotation and wedges.


The MOSFET detector has a compact construction, provides instant readout, is of minimal weight and can be used on any surface.

Signature: Rep Pract Oncol Radiother, 2009; 14(5) : 176-183

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